| Manufacturer Part#: | CY7C131E-55NXI |
| Product Category: | Memory |
| Manufacturer: | Cypress Semiconductor |
| Description: | SRAM 8Kb (1Kb x 8) 55ns Dual-Port SRAM |
 CY7C131E-55NXI Datasheet |
|
| Package: | |
| Quantity: | 96 PCS |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| one to seven days | |
| Click buy button to purchase: | Buy |
DESCRIPTION
CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are high-speed, low-power CMOS 1 K / 2 K × 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE can be used as a standalone dual-port static RAM. It is the solution to applications requiring shared or buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.
APPLICATION
functional description
CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are high-speed, low-power CMOS 1 K / 2 K × 8 dual-port static RAMs. Two ports are provided permitting independent access to any location in memory. The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE can be used as a standalone dual-port static RAM. It is the solution to applications requiring shared or buffered data, such as cache memory for DSP, bit-slice, or multiprocessor designs.
Each port has independent control pins; chip enable (CE), write enable (R/W), and output enable (OE). Two flags are provided on each port, BUSY and INT. The BUSY flag signals that the port is trying to access the same location, which is currently being accessed by the other port. The INT is an interrupt flag indicating that data is placed in a unique location[1]. The BUSY and INT flags are push pull outputs. An automatic power-down feature is controlled independently on each port by the chip enable (CE) pins.
The CY7C131E / CY7C131AE / CY7C136E / CY7C136AE are available in 52-pin Pb-free PLCC and 52-pin Pb-free PQFP.
FEATURES
■ True dual-ported memory cells, which allow simultaneous
reads of the same memory location
■ 1 K / 2 K × 8 organization
■ 0.35 micron complementary metal oxide semiconductor
(CMOS) for optimum speed and power
■ High speed access: 15 ns
■ Low operating power: ICC = 110 mA (typical),
Standby: ISB3 = 0.05 mA (typical)
■ Fully asynchronous operation
■ Automatic power-down
■ BUSY output flag to indicate access to the same location by
both ports
■ INT flag for port-to-port communication
■ Available in 52-pin plastic leaded chip carrier (PLCC), 52-pin
plastic quad flat package (PQFP)
■ Pb-free packages available
SPECIFICATION
| Manufacturer | Cypress Semiconductor |
| Product Category | Memory |
RELEVANT POPULAR SEARCHES
| 64 kbit Parallel SRAM | 64 kbit 8 k x 8 Parallel SRAM |
| 8 Mbit SRAM | 512 k x 8 SRAM |
| 1 M x 36 Parallel 250 MHz SRAM | 400 MHz SRAM |
PICTURE
CY7C131E-55NXI image
SRAM 128K x 36 Synchronous Bank-Switchable Dual-Port SRAM
4G-bit NAND Flash Memory with spare 128M-bit
consumer memory