Manufacturer Part#: | K4S561632N-LC60 |
Product Category: | Memory |
Manufacturer: | SAMSUNG |
Description: | consumer memory |
K4S561632N-LC60  Datasheet | |
Package: | TSOP |
Quantity: | 15960 PCS |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
one to seven days | |
Click buy button to purchase: | Buy |
DESCRIPTION
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners.
APPLICATION
Package type
U : TSOPII (Lead-free)
100TQFP(Lead-free) only for 128Mb GDDR
Z : FBGA (Lead-free)
V : 144FBGA (Lead-free) only for 128Mb GDDR
L : TSOPII (Lead-free & Halogen-free)
H : FBGA (Lead-free & Halogen-free)
F : FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR
M : FBGA DDP (Lead-free & Halogen-free)
B : FBGA FLIP-CHIP (Lead-free & Halogen-free)
FEATURES
Speed
75 : 7.5ns, PC133 (133MHz CL=3)
60 : 6.0ns (166MHz CL=3)
50 : 5.0ns (200MHz CL=3)
40 : 4.0ns (250MHz CL=3)
B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)
E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
7A : GDDR3-2.6Gbps (0.77ns)
08 : GDDR3-2.4Gbps (0.8ns)
1A : GDDR3-2.0Gbps (1.0ns)
12 : GDDR3-1.6Gbps (1.25ns)
14 : GDDR3-1.4Gbps (1.4ns)
SPECIFICATION
Manufacturer | SAMSUNG |
Product Category | Memory |
RELEVANT POPULAR RESEARCHES
8 bit DRAM | SDRAM DRAM |
16 M x 16 SDRAM DRAM | - 40 C DRAM |
TSOP-86 + 85 C DRAM | SDRAM - DDR2 DRAM |
PICTURE
K4S561632N-LC60 image